由于大規(guī)模集成電路對硅單晶的質(zhì)量要求十分嚴格,其中雜質(zhì)碳的影響不容忽視。在工藝流程中,為了控制碳的污染,對多晶硅制備還原用電解凈化氫氣以及單晶硅制備所需的高純氬氣分別采用氣相色譜法和濃縮色譜法測定量含碳組分。然而對工藝重要中間產(chǎn)品-SiHCl_3中有機物碳的質(zhì)量控制猶關重要。
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浩瀚色譜（山東）應用技術開發(fā)有限公司利用氣相色譜儀對三氯氫硅中的氯硅烷進行了分析檢測。用面積百分比法方便、準確、快速的對各種氯硅烷進行了定量分析,定量相對標準偏差小于3%。
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名稱：DC-550填充柱
規(guī)格：3m*3mm
使用溫度：180°C
貨號：20231112006
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Due to the strict quality requirements for silicon single crystals in large-scale integrated circuits, the influence of impurity carbon cannot be ignored. In the process flow, in order to control carbon pollution, gas chromatography and concentration chromatography were used to determine the carbon content of high-purity argon gas required for the reduction of polycrystalline silicon and monocrystalline silicon, respectively. However, for important intermediate products in the process, SiHCl_ The quality control of organic carbon in the three is still crucial.
Haohan Chromatography (Shandong) Application Technology Development Co., Ltd. used a gas chromatograph to analyze and detect chlorosilane in trichlorosilane. The area percentage method was used for convenient, accurate, and rapid quantitative analysis of various chlorosilanes, with a relative standard deviation of less than 3%.
Name: DC-550 filled column
Specification: 3m * 3mm
Operating temperature: 180 ° C
Article number: 20231112006
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